Infineon OptiMOS™ -T2 N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S4H1ATMA2
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ -T2
Package Type
D2PAK (TO-263)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.002 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si
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BD 946.000
BD 0.946 Each (On a Reel of 1000) (Exc. Vat)
BD 1,040.600
BD 1.041 Each (On a Reel of 1000) (inc. VAT)
1000
BD 946.000
BD 0.946 Each (On a Reel of 1000) (Exc. Vat)
BD 1,040.600
BD 1.041 Each (On a Reel of 1000) (inc. VAT)
1000
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Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ -T2
Package Type
D2PAK (TO-263)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.002 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products