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N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK Infineon IPB120N06S4H1ATMA2

RS Stock No.: 218-3033Brand: InfineonManufacturers Part No.: IPB120N06S4H1ATMA2
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ -T2

Package Type

D2PAK (TO-263)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.002 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

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BD 4.150

BD 0.830 Each (In a Pack of 5) (Exc. Vat)

BD 4.565

BD 0.913 Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK Infineon IPB120N06S4H1ATMA2
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 4.150
10BD 8.300
15BD 12.450
20BD 16.600
25BD 20.750
30BD 24.900
35BD 29.050
40BD 33.200
45BD 37.350
50BD 41.500
55BD 45.650
60BD 49.800
65BD 53.950
70BD 58.100
75BD 62.250

BD 4.150

BD 0.830 Each (In a Pack of 5) (Exc. Vat)

BD 4.565

BD 0.913 Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK Infineon IPB120N06S4H1ATMA2
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 4.150
10BD 8.300
15BD 12.450
20BD 16.600
25BD 20.750
30BD 24.900
35BD 29.050
40BD 33.200
45BD 37.350
50BD 41.500
55BD 45.650
60BD 49.800
65BD 53.950
70BD 58.100
75BD 62.250

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ -T2

Package Type

D2PAK (TO-263)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.002 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more