Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
80 V
Series
OptiMOS™ -T2
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0041 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si
BD 8.216
BD 1.643 Each (In a Pack of 5) (Exc. Vat)
BD 9.038
BD 1.807 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 8.216
BD 1.643 Each (In a Pack of 5) (Exc. Vat)
BD 9.038
BD 1.807 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | BD 1.643 | BD 8.216 |
25 - 45 | BD 1.480 | BD 7.402 |
50 - 120 | BD 1.381 | BD 6.904 |
125 - 245 | BD 1.302 | BD 6.510 |
250+ | BD 1.218 | BD 6.090 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
80 V
Series
OptiMOS™ -T2
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0041 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si