Infineon OptiMOS™ -T2 N-Channel MOSFET, 45 A, 60 V, 3-Pin D2PAK IPB45N06S4L08ATMA3
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ -T2
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0079 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
1
Transistor Material
Si
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BD 319.000
BD 0.319 Each (On a Reel of 1000) (Exc. Vat)
BD 350.900
BD 0.351 Each (On a Reel of 1000) (inc. VAT)
1000
BD 319.000
BD 0.319 Each (On a Reel of 1000) (Exc. Vat)
BD 350.900
BD 0.351 Each (On a Reel of 1000) (inc. VAT)
1000
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ -T2
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0079 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
1
Transistor Material
Si
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products