Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ -T2
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0079 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
1
Transistor Material
Si
BD 5.335
BD 0.534 Each (In a Pack of 10) (Exc. Vat)
BD 5.869
BD 0.587 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 5.335
BD 0.534 Each (In a Pack of 10) (Exc. Vat)
BD 5.869
BD 0.587 Each (In a Pack of 10) (inc. VAT)
Standard
10
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | BD 0.534 | BD 5.335 |
| 50 - 90 | BD 0.506 | BD 5.060 |
| 100 - 240 | BD 0.500 | BD 5.005 |
| 250 - 490 | BD 0.473 | BD 4.730 |
| 500+ | BD 0.451 | BD 4.510 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ -T2
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0079 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
1
Transistor Material
Si


