Infineon OptiMOS™-T N-Channel MOSFET, 50 A, 120 V, 3-Pin D2PAK IPB50N12S3L15ATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
120 V
Series
OptiMOS™-T
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0154 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Number of Elements per Chip
1
Transistor Material
Si
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
BD 621.500
BD 0.622 Each (On a Reel of 1000) (Exc. Vat)
BD 683.650
BD 0.684 Each (On a Reel of 1000) (inc. VAT)
1000
BD 621.500
BD 0.622 Each (On a Reel of 1000) (Exc. Vat)
BD 683.650
BD 0.684 Each (On a Reel of 1000) (inc. VAT)
1000
Stock information temporarily unavailable.
Please check again later.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
120 V
Series
OptiMOS™-T
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0154 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Number of Elements per Chip
1
Transistor Material
Si
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products