Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
120 V
Series
OptiMOS™-T
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0154 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Number of Elements per Chip
1
Transistor Material
Si
BD 8.965
BD 0.896 Each (In a Pack of 10) (Exc. Vat)
BD 9.861
BD 0.986 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 8.965
BD 0.896 Each (In a Pack of 10) (Exc. Vat)
BD 9.861
BD 0.986 Each (In a Pack of 10) (inc. VAT)
Standard
10
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | BD 0.896 | BD 8.965 |
| 50 - 90 | BD 0.852 | BD 8.525 |
| 100 - 240 | BD 0.770 | BD 7.700 |
| 250 - 490 | BD 0.704 | BD 7.040 |
| 500+ | BD 0.676 | BD 6.765 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
120 V
Series
OptiMOS™-T
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0154 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Number of Elements per Chip
1
Transistor Material
Si


