Infineon CoolMOS™ Silicon N-Channel MOSFET, 31.2 A, 650 V, 3-Pin TO 263 IPB65R110CFDAATMA1

RS Stock No.: 222-4655Brand: InfineonManufacturers Part No.: IPB65R110CFDAATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

31.2 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™

Package Type

TO 263

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.11 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Transistor Material

Silicon

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Stock information temporarily unavailable.

BD 1,446.500

BD 1.446 Each (On a Reel of 1000) (Exc. Vat)

BD 1,591.150

BD 1.591 Each (On a Reel of 1000) (inc. VAT)

Infineon CoolMOS™ Silicon N-Channel MOSFET, 31.2 A, 650 V, 3-Pin TO 263 IPB65R110CFDAATMA1

1000

Available in multiples of 1000
1000BD 1,446.500
2000BD 2,893.000
3000BD 4,339.500
4000BD 5,786.000
5000BD 7,232.500
6000BD 8,679.000
7000BD 10,125.500
8000BD 11,572.000
9000BD 13,018.500
10000BD 14,465.000
11000BD 15,911.500
12000BD 17,358.000
13000BD 18,804.500
14000BD 20,251.000
15000BD 21,697.500

BD 1,446.500

BD 1.446 Each (On a Reel of 1000) (Exc. Vat)

BD 1,591.150

BD 1.591 Each (On a Reel of 1000) (inc. VAT)

Infineon CoolMOS™ Silicon N-Channel MOSFET, 31.2 A, 650 V, 3-Pin TO 263 IPB65R110CFDAATMA1
Stock information temporarily unavailable.

1000

Available in multiples of 1000
1000BD 1,446.500
2000BD 2,893.000
3000BD 4,339.500
4000BD 5,786.000
5000BD 7,232.500
6000BD 8,679.000
7000BD 10,125.500
8000BD 11,572.000
9000BD 13,018.500
10000BD 14,465.000
11000BD 15,911.500
12000BD 17,358.000
13000BD 18,804.500
14000BD 20,251.000
15000BD 21,697.500

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

31.2 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™

Package Type

TO 263

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.11 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more