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Dual SiC N-Channel MOSFET, 143 A, 40 V, 3-Pin PG-TO252-3 Infineon IPD023N04NF2SATMA1

RS Stock No.: 262-5861PBrand: InfineonManufacturers Part No.: IPD023N04NF2SATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

143 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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BD 0.485

Each (Supplied on a Reel) (Exc. Vat)

BD 0.533

Each (Supplied on a Reel) (inc. VAT)

Dual SiC N-Channel MOSFET, 143 A, 40 V, 3-Pin PG-TO252-3 Infineon IPD023N04NF2SATMA1
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

50

Available in multiples of 50
50BD 24.250
55BD 26.675
60BD 29.100
65BD 31.525
70BD 33.950
75BD 36.375
80BD 38.800
85BD 41.225
90BD 43.650
50BD 24.250
55BD 26.675
60BD 29.100
65BD 31.525
70BD 33.950
75BD 36.375

BD 0.485

Each (Supplied on a Reel) (Exc. Vat)

BD 0.533

Each (Supplied on a Reel) (inc. VAT)

Dual SiC N-Channel MOSFET, 143 A, 40 V, 3-Pin PG-TO252-3 Infineon IPD023N04NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

50

Available in multiples of 50
50BD 24.250
55BD 26.675
60BD 29.100
65BD 31.525
70BD 33.950
75BD 36.375
80BD 38.800
85BD 41.225
90BD 43.650
50BD 24.250
55BD 26.675
60BD 29.100
65BD 31.525
70BD 33.950
75BD 36.375

Buy in bulk

quantityUnit pricePer Reel
50 - 120BD 0.485BD 2.425
125 - 245BD 0.455BD 2.275
250 - 495BD 0.425BD 2.125
500+BD 0.225BD 1.125

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

143 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more