Infineon Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 IPD028N06NF2SATMA1

RS Stock No.: 262-5863Brand: InfineonManufacturers Part No.: IPD028N06NF2SATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

139 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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Stock information temporarily unavailable.

BD 3.630

BD 0.726 Each (In a Pack of 5) (Exc. Vat)

BD 3.993

BD 0.799 Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 IPD028N06NF2SATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 3.630
10BD 7.260
15BD 10.890
20BD 14.520
25BD 18.150
30BD 21.780
35BD 25.410
40BD 29.040
45BD 32.670
50BD 29.975
55BD 32.972
60BD 35.970
65BD 38.968
70BD 41.965
75BD 44.962

BD 3.630

BD 0.726 Each (In a Pack of 5) (Exc. Vat)

BD 3.993

BD 0.799 Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 IPD028N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 3.630
10BD 7.260
15BD 10.890
20BD 14.520
25BD 18.150
30BD 21.780
35BD 25.410
40BD 29.040
45BD 32.670
50BD 29.975
55BD 32.972
60BD 35.970
65BD 38.968
70BD 41.965
75BD 44.962

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Pack
5 - 45BD 0.726BD 3.630
50 - 120BD 0.600BD 2.998
125 - 245BD 0.561BD 2.805
250 - 495BD 0.528BD 2.640
500+BD 0.407BD 2.035

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

139 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more