Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 Infineon IPD029N04NF2SATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
131 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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BD 0.435
Each (Supplied on a Reel) (Exc. Vat)
BD 0.479
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
5
BD 0.435
Each (Supplied on a Reel) (Exc. Vat)
BD 0.479
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
5
Buy in bulk
| quantity | Unit price | Per Reel |
|---|---|---|
| 5 - 45 | BD 0.435 | BD 2.175 |
| 50 - 120 | BD 0.390 | BD 1.950 |
| 125 - 245 | BD 0.365 | BD 1.825 |
| 250 - 495 | BD 0.345 | BD 1.725 |
| 500+ | BD 0.180 | BD 0.900 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
131 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products