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Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 IPD038N06NF2SATMA1

RS Stock No.: 262-5867Brand: InfineonManufacturers Part No.: IPD038N06NF2SATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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Stock information temporarily unavailable.

BD 3.465

BD 0.346 Each (In a Pack of 10) (Exc. Vat)

BD 3.811

BD 0.381 Each (In a Pack of 10) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 IPD038N06NF2SATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10BD 3.465
20BD 6.930
30BD 10.395
40BD 13.860
50BD 17.325
60BD 20.790
70BD 24.255
80BD 27.720
90BD 31.185
100BD 33.075
110BD 36.382
120BD 39.690
130BD 42.998
140BD 46.305
150BD 49.612

BD 3.465

BD 0.346 Each (In a Pack of 10) (Exc. Vat)

BD 3.811

BD 0.381 Each (In a Pack of 10) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 IPD038N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10BD 3.465
20BD 6.930
30BD 10.395
40BD 13.860
50BD 17.325
60BD 20.790
70BD 24.255
80BD 27.720
90BD 31.185
100BD 33.075
110BD 36.382
120BD 39.690
130BD 42.998
140BD 46.305
150BD 49.612

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
10 - 90BD 0.346BD 3.465
100 - 240BD 0.331BD 3.308
250 - 490BD 0.320BD 3.202
500 - 990BD 0.315BD 3.150
1000+BD 0.205BD 2.048

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more