Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Series
IPD25CN10N G
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
71 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Width
7.47mm
Number of Elements per Chip
1
Height
2.41mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
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BD 0.450
Each (In a Pack of 10) (Exc. Vat)
BD 0.495
Each (In a Pack of 10) (Including VAT)
10
BD 0.450
Each (In a Pack of 10) (Exc. Vat)
BD 0.495
Each (In a Pack of 10) (Including VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | BD 0.450 | BD 4.500 |
100 - 240 | BD 0.350 | BD 3.500 |
250 - 490 | BD 0.330 | BD 3.300 |
500 - 990 | BD 0.305 | BD 3.050 |
1000+ | BD 0.285 | BD 2.850 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Series
IPD25CN10N G
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
71 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Width
7.47mm
Number of Elements per Chip
1
Height
2.41mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V