Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
200 V
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3 + 2 Tab
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
7.47mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Series
IPD320N20N3 G
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.41mm
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BD 1.015
Each (In a Pack of 10) (Exc. Vat)
BD 1.117
Each (In a Pack of 10) (Including VAT)
10
BD 1.015
Each (In a Pack of 10) (Exc. Vat)
BD 1.117
Each (In a Pack of 10) (Including VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | BD 1.015 | BD 10.150 |
100 - 240 | BD 0.815 | BD 8.150 |
250 - 490 | BD 0.775 | BD 7.750 |
500 - 990 | BD 0.710 | BD 7.100 |
1000+ | BD 0.585 | BD 5.850 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
200 V
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3 + 2 Tab
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
7.47mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Series
IPD320N20N3 G
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.41mm