Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™-T
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.026 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Number of Elements per Chip
1
Transistor Material
Si
BD 811.250
BD 0.324 Each (On a Reel of 2500) (Exc. Vat)
BD 892.375
BD 0.356 Each (On a Reel of 2500) (inc. VAT)
2500
BD 811.250
BD 0.324 Each (On a Reel of 2500) (Exc. Vat)
BD 892.375
BD 0.356 Each (On a Reel of 2500) (inc. VAT)
2500
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™-T
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.026 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Number of Elements per Chip
1
Transistor Material
Si


