Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™-T
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.026 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Number of Elements per Chip
1
Transistor Material
Si
BD 6.682
BD 0.446 Each (In a Pack of 15) (Exc. Vat)
BD 7.350
BD 0.491 Each (In a Pack of 15) (inc. VAT)
Standard
15
BD 6.682
BD 0.446 Each (In a Pack of 15) (Exc. Vat)
BD 7.350
BD 0.491 Each (In a Pack of 15) (inc. VAT)
Standard
15
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 15 - 60 | BD 0.446 | BD 6.682 |
| 75 - 135 | BD 0.424 | BD 6.352 |
| 150 - 360 | BD 0.407 | BD 6.105 |
| 375 - 735 | BD 0.390 | BD 5.858 |
| 750+ | BD 0.368 | BD 5.528 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™-T
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.026 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Number of Elements per Chip
1
Transistor Material
Si


