Infineon OptiMOS™ -T2 N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD50N06S4L12ATMA2

RS Stock No.: 218-3044Brand: InfineonManufacturers Part No.: IPD50N06S4L12ATMA2
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ -T2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.012 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

1

Transistor Material

Si

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Stock information temporarily unavailable.

BD 453.750

BD 0.182 Each (On a Reel of 2500) (Exc. Vat)

BD 499.125

BD 0.200 Each (On a Reel of 2500) (inc. VAT)

Infineon OptiMOS™ -T2 N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD50N06S4L12ATMA2

2500

Available in multiples of 2500
2500BD 453.750
5000BD 907.500
7500BD 1,361.250
10000BD 1,815.000
12500BD 2,268.750
15000BD 2,722.500
17500BD 3,176.250
20000BD 3,630.000
22500BD 4,083.750
25000BD 4,537.500
27500BD 4,991.250
30000BD 5,445.000
32500BD 5,898.750
35000BD 6,352.500
37500BD 6,806.250

BD 453.750

BD 0.182 Each (On a Reel of 2500) (Exc. Vat)

BD 499.125

BD 0.200 Each (On a Reel of 2500) (inc. VAT)

Infineon OptiMOS™ -T2 N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD50N06S4L12ATMA2
Stock information temporarily unavailable.

2500

Available in multiples of 2500
2500BD 453.750
5000BD 907.500
7500BD 1,361.250
10000BD 1,815.000
12500BD 2,268.750
15000BD 2,722.500
17500BD 3,176.250
20000BD 3,630.000
22500BD 4,083.750
25000BD 4,537.500
27500BD 4,991.250
30000BD 5,445.000
32500BD 5,898.750
35000BD 6,352.500
37500BD 6,806.250

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ -T2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.012 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more