Infineon OptiMOS™ -T2 Silicon N-Channel MOSFET, 50 A, 80 V, 3-Pin DPAK IPD50N08S413ATMA1

RS Stock No.: 229-1833Brand: InfineonManufacturers Part No.: IPD50N08S413ATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

80 V

Series

OptiMOS™ -T2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0132 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

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Stock information temporarily unavailable.

BD 7.508

BD 0.500 Each (In a Pack of 15) (Exc. Vat)

BD 8.259

BD 0.550 Each (In a Pack of 15) (inc. VAT)

Infineon OptiMOS™ -T2 Silicon N-Channel MOSFET, 50 A, 80 V, 3-Pin DPAK IPD50N08S413ATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 15.

Production -

Available in multiples of 15.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

15

Available in multiples of 15
15BD 7.508
30BD 15.015
45BD 22.522
60BD 30.030
75BD 35.475
90BD 42.570
105BD 49.665
120BD 56.760
135BD 63.855
150BD 68.475
165BD 75.322
180BD 82.170
195BD 89.018
210BD 95.865
225BD 102.712

BD 7.508

BD 0.500 Each (In a Pack of 15) (Exc. Vat)

BD 8.259

BD 0.550 Each (In a Pack of 15) (inc. VAT)

Infineon OptiMOS™ -T2 Silicon N-Channel MOSFET, 50 A, 80 V, 3-Pin DPAK IPD50N08S413ATMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 15.

Production -

Available in multiples of 15.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

15

Available in multiples of 15
15BD 7.508
30BD 15.015
45BD 22.522
60BD 30.030
75BD 35.475
90BD 42.570
105BD 49.665
120BD 56.760
135BD 63.855
150BD 68.475
165BD 75.322
180BD 82.170
195BD 89.018
210BD 95.865
225BD 102.712

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Pack
15 - 60BD 0.500BD 7.508
75 - 135BD 0.473BD 7.095
150 - 360BD 0.456BD 6.848
375 - 735BD 0.440BD 6.600
750+BD 0.418BD 6.270

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

80 V

Series

OptiMOS™ -T2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0132 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more