Infineon CoolMOS™ CE N-Channel MOSFET, 4.8 A, 500 V, 3-Pin DPAK IPD50R1K4CEAUMA1

RS Stock No.: 218-3047Brand: InfineonManufacturers Part No.: IPD50R1K4CEAUMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

4.8 A

Maximum Drain Source Voltage

500 V

Series

CoolMOS™ CE

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

Si

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Stock information temporarily unavailable.

BD 10.725

BD 0.214 Each (In a Pack of 50) (Exc. Vat)

BD 11.797

BD 0.235 Each (In a Pack of 50) (inc. VAT)

Infineon CoolMOS™ CE N-Channel MOSFET, 4.8 A, 500 V, 3-Pin DPAK IPD50R1K4CEAUMA1
Select packaging type

BD 10.725

BD 0.214 Each (In a Pack of 50) (Exc. Vat)

BD 11.797

BD 0.235 Each (In a Pack of 50) (inc. VAT)

Infineon CoolMOS™ CE N-Channel MOSFET, 4.8 A, 500 V, 3-Pin DPAK IPD50R1K4CEAUMA1
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
50 - 50BD 0.214BD 10.725
100 - 200BD 0.154BD 7.700
250 - 450BD 0.148BD 7.425
500 - 1200BD 0.138BD 6.875
1250+BD 0.132BD 6.600

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

4.8 A

Maximum Drain Source Voltage

500 V

Series

CoolMOS™ CE

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more