Infineon CoolMOS™ CE N-Channel MOSFET, 9 A, 500 V, 3-Pin DPAK IPD50R650CEAUMA1

RS Stock No.: 214-9041Brand: InfineonManufacturers Part No.: IPD50R650CEAUMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

500 V

Series

CoolMOS™ CE

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.65 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

Si

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Stock information temporarily unavailable.

BD 8.525

BD 0.341 Each (In a Pack of 25) (Exc. Vat)

BD 9.377

BD 0.375 Each (In a Pack of 25) (inc. VAT)

Infineon CoolMOS™ CE N-Channel MOSFET, 9 A, 500 V, 3-Pin DPAK IPD50R650CEAUMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 25
25BD 8.525
50BD 17.050
75BD 25.575
100BD 34.100
125BD 40.562
150BD 48.675
175BD 56.788
200BD 64.900
225BD 73.012
250BD 79.750
275BD 87.725
300BD 95.700
325BD 103.675
350BD 111.650
375BD 119.625

BD 8.525

BD 0.341 Each (In a Pack of 25) (Exc. Vat)

BD 9.377

BD 0.375 Each (In a Pack of 25) (inc. VAT)

Infineon CoolMOS™ CE N-Channel MOSFET, 9 A, 500 V, 3-Pin DPAK IPD50R650CEAUMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 25
25BD 8.525
50BD 17.050
75BD 25.575
100BD 34.100
125BD 40.562
150BD 48.675
175BD 56.788
200BD 64.900
225BD 73.012
250BD 79.750
275BD 87.725
300BD 95.700
325BD 103.675
350BD 111.650
375BD 119.625

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Pack
25 - 100BD 0.341BD 8.525
125 - 225BD 0.324BD 8.112
250 - 600BD 0.319BD 7.975
625 - 1225BD 0.297BD 7.425
1250+BD 0.280BD 7.012

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

500 V

Series

CoolMOS™ CE

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.65 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more