Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
250 V
Series
IPD600N25N3 G
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
7.47mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Height
2.41mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
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BD 1.000
Each (In a Pack of 10) (Exc. Vat)
BD 1.100
Each (In a Pack of 10) (Including VAT)
10
BD 1.000
Each (In a Pack of 10) (Exc. Vat)
BD 1.100
Each (In a Pack of 10) (Including VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 10 | BD 1.000 | BD 10.000 |
20 - 40 | BD 0.820 | BD 8.200 |
50 - 90 | BD 0.770 | BD 7.700 |
100 - 240 | BD 0.720 | BD 7.200 |
250+ | BD 0.660 | BD 6.600 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
250 V
Series
IPD600N25N3 G
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
7.47mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Height
2.41mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V