Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ CE
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Number of Elements per Chip
1
Transistor Material
Si
BD 7.975
BD 0.319 Each (In a Pack of 25) (Exc. Vat)
BD 8.773
BD 0.351 Each (In a Pack of 25) (inc. VAT)
Standard
25
BD 7.975
BD 0.319 Each (In a Pack of 25) (Exc. Vat)
BD 8.773
BD 0.351 Each (In a Pack of 25) (inc. VAT)
Standard
25
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 25 - 100 | BD 0.319 | BD 7.975 |
| 125 - 225 | BD 0.302 | BD 7.562 |
| 250 - 600 | BD 0.297 | BD 7.425 |
| 625 - 1225 | BD 0.280 | BD 7.012 |
| 1250+ | BD 0.270 | BD 6.738 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ CE
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Number of Elements per Chip
1
Transistor Material
Si


