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N-Channel MOSFET, 3.9 A, 800 V, 3-Pin DPAK Infineon IPD80R1K4CEATMA1

RS Stock No.: 214-4396Brand: InfineonManufacturers Part No.: IPD80R1K4CEATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

3.9 A

Maximum Drain Source Voltage

800 V

Series

CoolMOS™ CE

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Maximum Gate Threshold Voltage

3.9V

Number of Elements per Chip

1

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BD 0.245

Each (In a Pack of 15) (Exc. Vat)

BD 0.269

Each (In a Pack of 15) (inc. VAT)

N-Channel MOSFET, 3.9 A, 800 V, 3-Pin DPAK Infineon IPD80R1K4CEATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 15.

Production -

Available in multiples of 15.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

15

Available in multiples of 15
15BD 3.675
30BD 7.350
45BD 11.025
60BD 14.700
75BD 18.375
90BD 22.050
105BD 25.725
120BD 29.400
135BD 33.075
150BD 36.750
165BD 40.425
180BD 44.100
195BD 47.775
210BD 51.450
225BD 55.125

BD 0.245

Each (In a Pack of 15) (Exc. Vat)

BD 0.269

Each (In a Pack of 15) (inc. VAT)

N-Channel MOSFET, 3.9 A, 800 V, 3-Pin DPAK Infineon IPD80R1K4CEATMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 15.

Production -

Available in multiples of 15.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

15

Available in multiples of 15
15BD 3.675
30BD 7.350
45BD 11.025
60BD 14.700
75BD 18.375
90BD 22.050
105BD 25.725
120BD 29.400
135BD 33.075
150BD 36.750
165BD 40.425
180BD 44.100
195BD 47.775
210BD 51.450
225BD 55.125

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

3.9 A

Maximum Drain Source Voltage

800 V

Series

CoolMOS™ CE

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Maximum Gate Threshold Voltage

3.9V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more