Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
86 A
Maximum Drain Source Voltage
40 V
Series
OptiMOS™ -T2
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0052 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si
BD 440.000
BD 0.176 Each (On a Reel of 2500) (Exc. Vat)
BD 484.000
BD 0.194 Each (On a Reel of 2500) (inc. VAT)
2500
BD 440.000
BD 0.176 Each (On a Reel of 2500) (Exc. Vat)
BD 484.000
BD 0.194 Each (On a Reel of 2500) (inc. VAT)
2500
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
86 A
Maximum Drain Source Voltage
40 V
Series
OptiMOS™ -T2
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0052 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si


