Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
86 A
Maximum Drain Source Voltage
40 V
Series
OptiMOS™ -T2
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0052 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si
BD 5.115
BD 0.341 Each (In a Pack of 15) (Exc. Vat)
BD 5.627
BD 0.375 Each (In a Pack of 15) (inc. VAT)
Standard
15
BD 5.115
BD 0.341 Each (In a Pack of 15) (Exc. Vat)
BD 5.627
BD 0.375 Each (In a Pack of 15) (inc. VAT)
Standard
15
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 15 - 60 | BD 0.341 | BD 5.115 |
| 75 - 135 | BD 0.324 | BD 4.868 |
| 150 - 360 | BD 0.308 | BD 4.620 |
| 375 - 735 | BD 0.302 | BD 4.538 |
| 750+ | BD 0.286 | BD 4.290 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
86 A
Maximum Drain Source Voltage
40 V
Series
OptiMOS™ -T2
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0052 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si


