Infineon OptiMOS™ -T2 N-Channel MOSFET, 86 A, 40 V, 3-Pin DPAK IPD90N04S405ATMA1

RS Stock No.: 218-3053Brand: InfineonManufacturers Part No.: IPD90N04S405ATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

86 A

Maximum Drain Source Voltage

40 V

Series

OptiMOS™ -T2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0052 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

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Stock information temporarily unavailable.

BD 5.115

BD 0.341 Each (In a Pack of 15) (Exc. Vat)

BD 5.627

BD 0.375 Each (In a Pack of 15) (inc. VAT)

Infineon OptiMOS™ -T2 N-Channel MOSFET, 86 A, 40 V, 3-Pin DPAK IPD90N04S405ATMA1
Select packaging type

BD 5.115

BD 0.341 Each (In a Pack of 15) (Exc. Vat)

BD 5.627

BD 0.375 Each (In a Pack of 15) (inc. VAT)

Infineon OptiMOS™ -T2 N-Channel MOSFET, 86 A, 40 V, 3-Pin DPAK IPD90N04S405ATMA1
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
15 - 60BD 0.341BD 5.115
75 - 135BD 0.324BD 4.868
150 - 360BD 0.308BD 4.620
375 - 735BD 0.302BD 4.538
750+BD 0.286BD 4.290

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

86 A

Maximum Drain Source Voltage

40 V

Series

OptiMOS™ -T2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0052 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more