Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Package Type
SuperSO8 5 x 6 Dual
Series
OptiMOS™ -T2
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.0112 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Transistor Material
Si
Number of Elements per Chip
2
BD 6.600
BD 0.660 Each (In a Pack of 10) (Exc. Vat)
BD 7.260
BD 0.726 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 6.600
BD 0.660 Each (In a Pack of 10) (Exc. Vat)
BD 7.260
BD 0.726 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | BD 0.660 | BD 6.600 |
| 50 - 90 | BD 0.627 | BD 6.270 |
| 100 - 240 | BD 0.600 | BD 5.995 |
| 250 - 490 | BD 0.578 | BD 5.775 |
| 500+ | BD 0.550 | BD 5.500 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Package Type
SuperSO8 5 x 6 Dual
Series
OptiMOS™ -T2
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.0112 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Transistor Material
Si
Number of Elements per Chip
2


