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Infineon Dual N-Channel MOSFET, 20 A, 100 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N10S436AATMA1

RS Stock No.: 218-3060Brand: InfineonManufacturers Part No.: IPG20N10S436AATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™ -T2

Package Type

SuperSO8 5 x 6 Dual

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.036 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

2

Transistor Material

Si

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Stock information temporarily unavailable.

BD 4.462

BD 0.446 Each (In a Pack of 10) (Exc. Vat)

BD 4.908

BD 0.491 Each (In a Pack of 10) (inc. VAT)

Infineon Dual N-Channel MOSFET, 20 A, 100 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N10S436AATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10BD 4.462
20BD 8.925
30BD 13.388
40BD 17.850
50BD 21.262
60BD 25.515
70BD 29.768
80BD 34.020
90BD 38.272
100BD 40.950
110BD 45.045
120BD 49.140
130BD 53.235
140BD 57.330
150BD 61.425

BD 4.462

BD 0.446 Each (In a Pack of 10) (Exc. Vat)

BD 4.908

BD 0.491 Each (In a Pack of 10) (inc. VAT)

Infineon Dual N-Channel MOSFET, 20 A, 100 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N10S436AATMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10BD 4.462
20BD 8.925
30BD 13.388
40BD 17.850
50BD 21.262
60BD 25.515
70BD 29.768
80BD 34.020
90BD 38.272
100BD 40.950
110BD 45.045
120BD 49.140
130BD 53.235
140BD 57.330
150BD 61.425

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
10 - 40BD 0.446BD 4.462
50 - 90BD 0.425BD 4.252
100 - 240BD 0.410BD 4.095
250 - 490BD 0.394BD 3.938
500+BD 0.373BD 3.728

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™ -T2

Package Type

SuperSO8 5 x 6 Dual

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.036 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

2

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more