Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ -T2
Package Type
I2PAK (TO-262)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.0092 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Transistor Material
Si
Number of Elements per Chip
1
BD 36.850
BD 0.737 Each (In a Tube of 50) (Exc. Vat)
BD 40.535
BD 0.811 Each (In a Tube of 50) (inc. VAT)
50
BD 36.850
BD 0.737 Each (In a Tube of 50) (Exc. Vat)
BD 40.535
BD 0.811 Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | BD 0.737 | BD 36.850 |
| 100 - 200 | BD 0.600 | BD 29.975 |
| 250 - 450 | BD 0.561 | BD 28.050 |
| 500 - 950 | BD 0.528 | BD 26.400 |
| 1000+ | BD 0.500 | BD 25.025 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ -T2
Package Type
I2PAK (TO-262)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.0092 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Transistor Material
Si
Number of Elements per Chip
1


