Infineon OptiMOS™ N-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 IPP057N06N3GXKSA1

Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.0057 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si
BD 36.850
BD 0.737 Each (In a Tube of 50) (Exc. Vat)
BD 40.535
BD 0.811 Each (In a Tube of 50) (inc. VAT)
50
BD 36.850
BD 0.737 Each (In a Tube of 50) (Exc. Vat)
BD 40.535
BD 0.811 Each (In a Tube of 50) (inc. VAT)
50
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Please check again later.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | BD 0.737 | BD 36.850 |
| 100 - 200 | BD 0.671 | BD 33.550 |
| 250 - 450 | BD 0.638 | BD 31.900 |
| 500 - 1200 | BD 0.600 | BD 29.975 |
| 1250+ | BD 0.583 | BD 29.150 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.0057 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si

