Infineon OptiMOS™ N-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 IPP057N06N3GXKSA1

RS Stock No.: 215-2536Brand: InfineonManufacturers Part No.: IPP057N06N3GXKSA1Distrelec Article No.: 30341231
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.0057 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

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Stock information temporarily unavailable.

BD 36.850

BD 0.737 Each (In a Tube of 50) (Exc. Vat)

BD 40.535

BD 0.811 Each (In a Tube of 50) (inc. VAT)

Infineon OptiMOS™ N-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 IPP057N06N3GXKSA1

BD 36.850

BD 0.737 Each (In a Tube of 50) (Exc. Vat)

BD 40.535

BD 0.811 Each (In a Tube of 50) (inc. VAT)

Infineon OptiMOS™ N-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 IPP057N06N3GXKSA1
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Tube
50 - 50BD 0.737BD 36.850
100 - 200BD 0.671BD 33.550
250 - 450BD 0.638BD 31.900
500 - 1200BD 0.600BD 29.975
1250+BD 0.583BD 29.150

Ideate. Create. Collaborate

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.0057 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more