Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
150 V
Series
OptiMOS™
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Width
4.57mm
Length
10.36mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
11.17mm
BD 4.872
BD 2.436 Each (In a Pack of 2) (Exc. Vat)
BD 5.359
BD 2.680 Each (In a Pack of 2) (inc. VAT)
2
BD 4.872
BD 2.436 Each (In a Pack of 2) (Exc. Vat)
BD 5.359
BD 2.680 Each (In a Pack of 2) (inc. VAT)
2
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
2 - 8 | BD 2.436 | BD 4.872 |
10 - 18 | BD 2.315 | BD 4.630 |
20 - 48 | BD 2.021 | BD 4.042 |
50 - 98 | BD 1.890 | BD 3.780 |
100+ | BD 1.769 | BD 3.538 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
150 V
Series
OptiMOS™
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Width
4.57mm
Length
10.36mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
11.17mm