Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
150 V
Series
IPP075N15N3 G
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
4.57mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.36mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Height
11.17mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
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BD 1.870
Each (In a Tube of 50) (Exc. Vat)
BD 2.057
Each (In a Tube of 50) (Including VAT)
50
BD 1.870
Each (In a Tube of 50) (Exc. Vat)
BD 2.057
Each (In a Tube of 50) (Including VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | BD 1.870 | BD 93.500 |
100 - 200 | BD 1.775 | BD 88.750 |
250+ | BD 1.600 | BD 80.000 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
150 V
Series
IPP075N15N3 G
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
4.57mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.36mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Height
11.17mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V