Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
44 A
Maximum Drain Source Voltage
300 V
Series
CoolMOS™
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.041 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon
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BD 2.005
Each (Supplied in a Tube) (Exc. Vat)
BD 2.205
Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
2
BD 2.005
Each (Supplied in a Tube) (Exc. Vat)
BD 2.205
Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
2
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
44 A
Maximum Drain Source Voltage
300 V
Series
CoolMOS™
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.041 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon