Infineon CoolMOS™ CE N-Channel MOSFET, 14.1 A, 550 V, 3-Pin TO-220 IPP50R380CEXKSA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
14.1 A
Maximum Drain Source Voltage
550 V
Series
CoolMOS™ CE
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
98 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.36mm
Typical Gate Charge @ Vgs
24.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.85V
Product details
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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BD 4.565
BD 0.456 Each (In a Pack of 10) (Exc. Vat)
BD 5.021
BD 0.502 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 4.565
BD 0.456 Each (In a Pack of 10) (Exc. Vat)
BD 5.021
BD 0.502 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | BD 0.456 | BD 4.565 |
| 50 - 90 | BD 0.434 | BD 4.345 |
| 100 - 240 | BD 0.418 | BD 4.180 |
| 250 - 490 | BD 0.402 | BD 4.015 |
| 500+ | BD 0.380 | BD 3.795 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
14.1 A
Maximum Drain Source Voltage
550 V
Series
CoolMOS™ CE
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
98 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.36mm
Typical Gate Charge @ Vgs
24.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.85V
Product details
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products