Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
600 V
Series
CoolMOS™ P7
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.099 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
117 W
Transistor Configuration
Single
Maximum Gate Source Voltage
± 20 V
Number of Elements per Chip
1
Transistor Material
Si
Length
10.36mm
BD 9.345
BD 1.869 Each (In a Pack of 5) (Exc. Vat)
BD 10.279
BD 2.056 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 9.345
BD 1.869 Each (In a Pack of 5) (Exc. Vat)
BD 10.279
BD 2.056 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | BD 1.869 | BD 9.345 |
25 - 45 | BD 1.570 | BD 7.849 |
50 - 120 | BD 1.475 | BD 7.376 |
125 - 245 | BD 1.386 | BD 6.930 |
250+ | BD 1.307 | BD 6.536 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
600 V
Series
CoolMOS™ P7
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.099 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
117 W
Transistor Configuration
Single
Maximum Gate Source Voltage
± 20 V
Number of Elements per Chip
1
Transistor Material
Si
Length
10.36mm