Infineon CoolMOS CP N-Channel MOSFET, 16 A, 650 V, 3-Pin TO-220 IPP60R199CPXKSA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Series
CoolMOS CP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
490 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.36mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Height
15.95mm
Minimum Operating Temperature
-55 °C
Product details
Infineon CoolMOS™CP Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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BD 3.839
BD 1.920 Each (In a Pack of 2) (Exc. Vat)
BD 4.223
BD 2.112 Each (In a Pack of 2) (inc. VAT)
Standard
2
BD 3.839
BD 1.920 Each (In a Pack of 2) (Exc. Vat)
BD 4.223
BD 2.112 Each (In a Pack of 2) (inc. VAT)
Standard
2
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 18 | BD 1.920 | BD 3.839 |
| 20 - 48 | BD 1.727 | BD 3.454 |
| 50 - 98 | BD 1.612 | BD 3.223 |
| 100 - 198 | BD 1.512 | BD 3.025 |
| 200+ | BD 1.414 | BD 2.827 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Series
CoolMOS CP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
490 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.36mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Height
15.95mm
Minimum Operating Temperature
-55 °C
Product details
Infineon CoolMOS™CP Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products