Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
700 V
Series
CoolMOS C7
Package Type
TO-220
Series
CoolMOS™ C7
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
72 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.36mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Width
15.95mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
Height
4.57mm
Product details
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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BD 1.510
Each (Supplied in a Tube) (Exc. Vat)
BD 1.661
Each (Supplied in a Tube) (Including VAT)
Production pack (Tube)
4
BD 1.510
Each (Supplied in a Tube) (Exc. Vat)
BD 1.661
Each (Supplied in a Tube) (Including VAT)
Production pack (Tube)
4
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
4 - 36 | BD 1.510 | BD 6.040 |
40 - 96 | BD 1.360 | BD 5.440 |
100 - 196 | BD 1.285 | BD 5.140 |
200 - 396 | BD 1.195 | BD 4.780 |
400+ | BD 1.105 | BD 4.420 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
700 V
Series
CoolMOS C7
Package Type
TO-220
Series
CoolMOS™ C7
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
72 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.36mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Width
15.95mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
Height
4.57mm
Product details
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.