N-Channel MOSFET, 11 A, 700 V, 3-Pin TO-220 Infineon IPP65R310CFDXKSA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
700 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
310 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
104.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.36mm
Typical Gate Charge @ Vgs
41 nC @ 10 V
Width
4.57mm
Transistor Material
Si
Series
CoolMOS CFD
Minimum Operating Temperature
-55 °C
Height
15.95mm
Product details
Infineon CoolMOS™ CFD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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BD 330.000
BD 0.660 Each (In a Tube of 500) (Exc. Vat)
BD 363.000
BD 0.726 Each (In a Tube of 500) (inc. VAT)
500
BD 330.000
BD 0.660 Each (In a Tube of 500) (Exc. Vat)
BD 363.000
BD 0.726 Each (In a Tube of 500) (inc. VAT)
500
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Please check again later.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 500 - 2000 | BD 0.660 | BD 330.000 |
| 2500 - 4500 | BD 0.644 | BD 321.750 |
| 5000+ | BD 0.627 | BD 313.500 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
700 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
310 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
104.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.36mm
Typical Gate Charge @ Vgs
41 nC @ 10 V
Width
4.57mm
Transistor Material
Si
Series
CoolMOS CFD
Minimum Operating Temperature
-55 °C
Height
15.95mm
Product details
Infineon CoolMOS™ CFD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products