Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
120 V
Series
OptiMOS™-T
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.0116 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si
BD 11.275
BD 1.128 Each (In a Pack of 10) (Exc. Vat)
BD 12.403
BD 1.241 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 11.275
BD 1.128 Each (In a Pack of 10) (Exc. Vat)
BD 12.403
BD 1.241 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | BD 1.128 | BD 11.275 |
| 50 - 90 | BD 1.072 | BD 10.725 |
| 100 - 240 | BD 1.028 | BD 10.285 |
| 250 - 490 | BD 0.996 | BD 9.955 |
| 500+ | BD 0.940 | BD 9.405 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
120 V
Series
OptiMOS™-T
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.0116 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si


