Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ -T2
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.0071 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si
BD 7.245
BD 0.724 Each (In a Pack of 10) (Exc. Vat)
BD 7.969
BD 0.796 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 7.245
BD 0.724 Each (In a Pack of 10) (Exc. Vat)
BD 7.969
BD 0.796 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | BD 0.724 | BD 7.245 |
50 - 90 | BD 0.688 | BD 6.878 |
100 - 240 | BD 0.620 | BD 6.195 |
250 - 490 | BD 0.567 | BD 5.670 |
500+ | BD 0.546 | BD 5.460 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ -T2
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.0071 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si