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Infineon CoolMOS™ CE N-Channel MOSFET, 8.4 A, 600 V, 3-Pin IPAK IPS60R800CEAKMA1

RS Stock No.: 214-9103Brand: InfineonManufacturers Part No.: IPS60R800CEAKMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

8.4 A

Maximum Drain Source Voltage

600 V

Series

CoolMOS™ CE

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.8 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

Si

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Stock information temporarily unavailable.

BD 8.800

BD 0.352 Each (In a Pack of 25) (Exc. Vat)

BD 9.680

BD 0.387 Each (In a Pack of 25) (inc. VAT)

Infineon CoolMOS™ CE N-Channel MOSFET, 8.4 A, 600 V, 3-Pin IPAK IPS60R800CEAKMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 25
25BD 8.800
50BD 17.600
75BD 26.400
100BD 35.200
125BD 34.375
150BD 41.250
175BD 48.125
200BD 55.000
225BD 61.875
250BD 64.625
275BD 71.088
300BD 77.550
325BD 84.012
350BD 90.475
375BD 96.938

BD 8.800

BD 0.352 Each (In a Pack of 25) (Exc. Vat)

BD 9.680

BD 0.387 Each (In a Pack of 25) (inc. VAT)

Infineon CoolMOS™ CE N-Channel MOSFET, 8.4 A, 600 V, 3-Pin IPAK IPS60R800CEAKMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 25
25BD 8.800
50BD 17.600
75BD 26.400
100BD 35.200
125BD 34.375
150BD 41.250
175BD 48.125
200BD 55.000
225BD 61.875
250BD 64.625
275BD 71.088
300BD 77.550
325BD 84.012
350BD 90.475
375BD 96.938

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
25 - 100BD 0.352BD 8.800
125 - 225BD 0.275BD 6.875
250 - 600BD 0.258BD 6.462
625 - 1225BD 0.242BD 6.050
1250+BD 0.231BD 5.775

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

8.4 A

Maximum Drain Source Voltage

600 V

Series

CoolMOS™ CE

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.8 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more