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N-Channel MOSFET, 60 A, 650 V, 3-Pin TO-247 Infineon IPW60R045CPFKSA1

RS Stock No.: 752-8397Brand: InfineonManufacturers Part No.: IPW60R045CP
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS CP

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

431 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.21mm

Transistor Material

Si

Typical Gate Charge @ Vgs

150 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

16.13mm

Minimum Operating Temperature

-55 °C

Height

21.1mm

Product details

Infineon CoolMOS™CP Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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BD 7.400

BD 7.400 Each (Exc. Vat)

BD 8.140

BD 8.140 Each (inc. VAT)

N-Channel MOSFET, 60 A, 650 V, 3-Pin TO-247 Infineon IPW60R045CPFKSA1
Select packaging type

BD 7.400

BD 7.400 Each (Exc. Vat)

BD 8.140

BD 8.140 Each (inc. VAT)

N-Channel MOSFET, 60 A, 650 V, 3-Pin TO-247 Infineon IPW60R045CPFKSA1
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit price
1 - 1BD 7.400
2 - 4BD 7.180
5 - 9BD 7.075
10 - 14BD 6.950
15+BD 6.905

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS CP

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

431 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.21mm

Transistor Material

Si

Typical Gate Charge @ Vgs

150 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

16.13mm

Minimum Operating Temperature

-55 °C

Height

21.1mm

Product details

Infineon CoolMOS™CP Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more