Infineon CoolMOS™ C6 N-Channel MOSFET, 83 A, 700 V, 3-Pin TO-247 IPW65R037C6FKSA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
83 A
Maximum Drain Source Voltage
700 V
Series
CoolMOS™ C6
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
500 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
5.21mm
Length
16.13mm
Typical Gate Charge @ Vgs
330 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.85V
Height
21.1mm
Country of Origin
Malaysia
Product details
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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BD 183.810
BD 6.127 Each (In a Tube of 30) (Exc. Vat)
BD 202.191
BD 6.740 Each (In a Tube of 30) (inc. VAT)
30
BD 183.810
BD 6.127 Each (In a Tube of 30) (Exc. Vat)
BD 202.191
BD 6.740 Each (In a Tube of 30) (inc. VAT)
30
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Please check again later.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 30 | BD 6.127 | BD 183.810 |
| 60 - 60 | BD 5.819 | BD 174.570 |
| 90+ | BD 5.456 | BD 163.680 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
83 A
Maximum Drain Source Voltage
700 V
Series
CoolMOS™ C6
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
500 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
5.21mm
Length
16.13mm
Typical Gate Charge @ Vgs
330 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.85V
Height
21.1mm
Country of Origin
Malaysia
Product details
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products