Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ C7
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.125 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si
BD 41.415
BD 1.380 Each (In a Tube of 30) (Exc. Vat)
BD 45.557
BD 1.518 Each (In a Tube of 30) (inc. VAT)
30
BD 41.415
BD 1.380 Each (In a Tube of 30) (Exc. Vat)
BD 45.557
BD 1.518 Each (In a Tube of 30) (inc. VAT)
30
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Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
30 - 30 | BD 1.380 | BD 41.415 |
60 - 120 | BD 1.331 | BD 39.930 |
150+ | BD 1.221 | BD 36.630 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ C7
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.125 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si