Infineon CoolMOS™ C7 N-Channel MOSFET, 18 A, 650 V, 3-Pin TO-247 IPW65R125C7XKSA1

RS Stock No.: 214-9119Brand: InfineonManufacturers Part No.: IPW65R125C7XKSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

CoolMOS™ C7

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.125 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

1

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BD 12.128

BD 2.426 Each (In a Pack of 5) (Exc. Vat)

BD 13.341

BD 2.669 Each (In a Pack of 5) (inc. VAT)

Infineon CoolMOS™ C7 N-Channel MOSFET, 18 A, 650 V, 3-Pin TO-247 IPW65R125C7XKSA1
Select packaging type

BD 12.128

BD 2.426 Each (In a Pack of 5) (Exc. Vat)

BD 13.341

BD 2.669 Each (In a Pack of 5) (inc. VAT)

Infineon CoolMOS™ C7 N-Channel MOSFET, 18 A, 650 V, 3-Pin TO-247 IPW65R125C7XKSA1

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

QuantityUnit pricePer Pack
5 - 20BD 2.426BD 12.128
25 - 45BD 2.304BD 11.522
50+BD 2.090BD 10.450

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

CoolMOS™ C7

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.125 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more