N-Channel MOSFET, 11 A, 900 V, 3-Pin TO-247 Infineon IPW90R500C3FKSA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
68 nC @ 10 V
Number of Elements per Chip
1
Width
21.1mm
Transistor Material
Si
Series
CoolMOS C3
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
5.21mm
Product details
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
BD 3.531
BD 1.766 Each (In a Pack of 2) (Exc. Vat)
BD 3.884
BD 1.943 Each (In a Pack of 2) (inc. VAT)
Standard
2
BD 3.531
BD 1.766 Each (In a Pack of 2) (Exc. Vat)
BD 3.884
BD 1.943 Each (In a Pack of 2) (inc. VAT)
Standard
2
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 8 | BD 1.766 | BD 3.531 |
| 10 - 18 | BD 1.622 | BD 3.245 |
| 20 - 48 | BD 1.524 | BD 3.047 |
| 50 - 98 | BD 1.414 | BD 2.827 |
| 100+ | BD 1.320 | BD 2.640 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
68 nC @ 10 V
Number of Elements per Chip
1
Width
21.1mm
Transistor Material
Si
Series
CoolMOS C3
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
5.21mm
Product details
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products