Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
53.5 A
Maximum Drain Source Voltage
600 V
Series
CoolMOS™ P6
Package Type
TO-247-4
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.07 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Number of Elements per Chip
1
Transistor Material
Si
BD 100.650
BD 3.355 Each (In a Tube of 30) (Exc. Vat)
BD 110.715
BD 3.691 Each (In a Tube of 30) (inc. VAT)
30
BD 100.650
BD 3.355 Each (In a Tube of 30) (Exc. Vat)
BD 110.715
BD 3.691 Each (In a Tube of 30) (inc. VAT)
30
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 30 | BD 3.355 | BD 100.650 |
| 60 - 120 | BD 3.190 | BD 95.700 |
| 150+ | BD 3.052 | BD 91.575 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
53.5 A
Maximum Drain Source Voltage
600 V
Series
CoolMOS™ P6
Package Type
TO-247-4
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.07 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Number of Elements per Chip
1
Transistor Material
Si


