Infineon HEXFET Silicon N-Channel MOSFET, 84 A, 60 V, 3-Pin D2PAK IRF1010ESTRLPBF

RS Stock No.: 222-4732Brand: InfineonManufacturers Part No.: IRF1010ESTRLPBFDistrelec Article No.: 30284002
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

84 A

Maximum Drain Source Voltage

60 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.012 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

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BD 281.600

BD 0.352 Each (On a Reel of 800) (Exc. Vat)

BD 309.760

BD 0.387 Each (On a Reel of 800) (inc. VAT)

Infineon HEXFET Silicon N-Channel MOSFET, 84 A, 60 V, 3-Pin D2PAK IRF1010ESTRLPBF

BD 281.600

BD 0.352 Each (On a Reel of 800) (Exc. Vat)

BD 309.760

BD 0.387 Each (On a Reel of 800) (inc. VAT)

Infineon HEXFET Silicon N-Channel MOSFET, 84 A, 60 V, 3-Pin D2PAK IRF1010ESTRLPBF

Stock information temporarily unavailable.

Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

84 A

Maximum Drain Source Voltage

60 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.012 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more