Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
100 V
Series
IRF3710ZS
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
9.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
82 nC @ 10 V
Height
4.83mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
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BD 0.640
Each (In a Pack of 10) (Exc. Vat)
BD 0.704
Each (In a Pack of 10) (Including VAT)
10
BD 0.640
Each (In a Pack of 10) (Exc. Vat)
BD 0.704
Each (In a Pack of 10) (Including VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | BD 0.640 | BD 6.400 |
50 - 90 | BD 0.530 | BD 5.300 |
100 - 240 | BD 0.500 | BD 5.000 |
250 - 490 | BD 0.470 | BD 4.700 |
500+ | BD 0.440 | BD 4.400 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
100 V
Series
IRF3710ZS
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
9.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
82 nC @ 10 V
Height
4.83mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V