Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
80 V
Series
HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
0.015 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.9V
Number of Elements per Chip
1
Transistor Material
Si
Stock information temporarily unavailable.
Please check again later.
BD 0.370
Each (On a Reel of 4800) (Exc. Vat)
BD 0.407
Each (On a Reel of 4800) (Including VAT)
4800
BD 0.370
Each (On a Reel of 4800) (Exc. Vat)
BD 0.407
Each (On a Reel of 4800) (Including VAT)
4800
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
80 V
Series
HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
0.015 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.9V
Number of Elements per Chip
1
Transistor Material
Si