Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
25 V
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Maximum Drain Source Resistance
0.0013 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
20V
Number of Elements per Chip
2
Series
HEXFET
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BD 0.825
Each (On a Reel of 4800) (Exc. Vat)
BD 0.907
Each (On a Reel of 4800) (Including VAT)
4800
BD 0.825
Each (On a Reel of 4800) (Exc. Vat)
BD 0.907
Each (On a Reel of 4800) (Including VAT)
4800
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
25 V
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Maximum Drain Source Resistance
0.0013 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
20V
Number of Elements per Chip
2
Series
HEXFET